c,mar,2012 digital transistors (built-in resistors) dta114em/dta114ee/dta114eua dta114eka /dta114eca/DTA114ESA equivalent circuit digital transistor (pnp) features ? built-in bias resistors enable the conf iguration of an inverter circuit without connecting external input re sistors(see equivalent circuit) ? the bias resistors consist of th in-film resistors with complete isolation to allow posit ive biasing of the inpu t.they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be se t for operation, making device design easy pin connenctions and marking dta114em sot-723 1. in 2. gnd 3. out marking:14 dta114ee sot-523 1. in 2. gnd 3. out marking:14 dta114eua sot-323 1. in 2. gnd 3. out marking:14 dta114eka sot-23-3l 1. in 2. gnd 3. out marking:14 dta114eca sot-23 1. in 2. gnd 3. out marking:14 DTA114ESA to-92s 1. gnd 2. out 3. in 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,jun,2013
maximum ratings(ta=25 unless otherwise noted) limits(dta114e ) symbol parameter m e ua ca ka sa unit v cc supply voltage -50 v v in input voltage -40 +10 v i o output current -50 ma i cm peak collector current -100 ma p d power dissipation 100 150 200 200 200 300 mw t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol conditions min typ max unit v i(off) v cc =-5v,i o =-100a -0.5 v input voltage v i(on) v o =-0.3v,i o =-10 ma -3 v output voltage v o(on) i o /i i =-10ma/-0.5ma -0.3 v input current i i v i =-5v -0.88 ma output current i o(off) v cc =-50v,v i =0 -0.5 a dc current gain g i v o =-5v,i o =-5ma 30 input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t v o =-10v,i o = - 5ma,f=100mhz 250 mhz 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,jun,2013
-0.1 -1 -10 -100 -0.1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 0481 21 62 0 0 2 4 6 8 10 12 -1 -10 -100 -10 -100 -1000 on characteristics t a =25 t a =100 v o =-0.3v -3 -0.3 -30 output current i o (ma) input voltage v i(on) (v) dta114exx off characteristics t a =100 t a =25 -3 -0.3 -0.03 v cc =-5v output current i o (ma) input voltage v i(off) (v) -0.3 -3 -30 30 t a =25 t a =100 v o =-5v 300 3 -3 -0.3 -30 g i ?? i o output current i o (ma) dc current gain g i dta114em DTA114ESA dta114eua/ca/ka dta114ee p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) -300 -30 -30 -3 v o(on) ?? i o t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification e,jun,2013
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